Materials Science Report

This report details various thin film deposition methods, including Atomic Layer Deposition (ALD), different types of sputtering (electronic, potential, and chemical), Metalorganic Chemical Vapor Deposition (MOCVD), and Molecular Beam Epitaxy (MBE). It explains the scientific formulation for silicon nitride (SiNx) and lists a wide variety of materials achievable through ALD, such as Al2O3, SiO2, ZnO, various metals, nitrides, and oxides in solid, liquid, and gas phases. The report also differentiates between the pressure regimes and source materials used in MOCVD and MBE, noting that both can be used to grow oxide thin films. The provided solution focuses on achieving high tensile stress through a specific ALD process involving silicon-containing precursor gas and nitrogen-containing plasma.

1. High tensile stress might be accomplished by framing a silicon-containing layer on a surface by
presenting the surface to a silicon-containing forerunner gas without plasma, shaping silicon
nitride by uncovering said silicon-containing layer to nitrogen-containing plasma, and afterward
rehashing these means to expand a thickness of the silicon nitride made in this way.
Scientific Formulation for it is SiNx.
2. A very wide variety of materials is possible with Atomic Layer Deposition, such as:
a. Al2O3 – Solid, SiO2 – Solid, ZnO – Solid, (Ru, Pt, W, Ni, Co) – Solid, (Hf3N4, Zr3N4,
AIN, TiN, TaN) – Liquid, ZnS – Gas, NiO2 – Gas, SnO2 – Gas.
3.
a. Electronic Sputtering - The term electronic sputtering can mean either sputtering
prompted by energetic electrons (for instance in a transmission electron magnifying
instrument), or sputtering because of high-energy or exceedingly charged substantial
particles that lose energy to the solid, for the most part by electronic halting force, where
the electronic excitation cause sputtering.
b. Potential Sputtering - On account of numerous charged shot particles a specific type of
electronic sputtering can occur that has been named potential sputtering. In these cases
the potential vitality put away in duplicate charged ions (i.e., the vitality important to
deliver a particle of this charge state from its impartial molecule) is freed when the ions
recombine amid effect on a solid surface (development of hollow atoms).
c. Chemical Sputtering - Sputtering saw to happen underneath the edge vitality of physical
sputtering is additionally frequently called chemical sputtering. The components behind
such sputtering are not generally surely knew, and might be difficult to recognize from
synthetic scratching. At lifted temperatures, concoction sputtering of carbon can be
comprehended to be because of the approaching particles debilitating bonds in the
example, which then desorb by warm enactment.
4. An example of a epitaxial thin film which can be grown by MOCVD and MBE both is a thin film of
Oxides.
MBE is growth on a heated substrate in ultra-high vacuum (UHV) environment (base pressure
~1E-9 Torr) typically using elemental sources. MOVPE also grows on a heated substrate but in a
much different pressure regime than MBE (typically 15 to 750 Torr). Rather than elemental
sources, MOVPE uses more complex compound sources, namely metal-organic sources (e.g. tri-
methyl Ga, In, Al, etc.), hydrides (e.g., AsH3, etc.), and other gas sources (e.g., disilane).